2026
18Jan
Analog Power 今日正式推出 AMS406N，一款超低导通电阻 0.99mΩ、额定 30V 的 N 沟道 MOSFET，在小尺寸功率器件领域树立了全新标杆。
阅读新闻稿2025
02May
Analog Power announced the launch of its latest 2.5 milliohm (mOhm), 100-volt (V) N-channel MOSFET, housed in the advanced TO-263-7L package. Designed to deliver exceptional efficiency and thermal performance, this new device is engineered to meet the demanding needs of modern power electronics applications.
阅读新闻稿01Apr
Analog Power releases a new record-low on-resistance 100-V N channel MOSFET in the TO-263 ( D2Pak ) package targeted at the new generation of cordless power tools and other motors operating off a 75-V maximum DC rail.
阅读新闻稿2024
12Dec
Analog Power introduces a low RDS 100-V P-Channel MOSFET for high side switching and regulation. The AM90P10-19B in a D2Pak package allows simple power switching with inrush limiting for 48V and higher bus voltages.
阅读新闻稿2016
01Dec
The 100-V AMR416N N-Channel MOSFET has an on-resistance of 10 m Ohm and half the input capacitance of prior devices making it ideal for synchronous rectification in travel chargers and similar applications.
阅读新闻稿01Sep
Low RDS 100-V P-Channel MOSFET for high side switching and regulation. The AM90P10-19B in a D2Pak package allows simple power switching with inrush limiting for 48V and higher bus voltages.
阅读新闻稿05Jul
New Record-Low RDS N-Channel 100V MOSFET in D2Pak Package for Motor Control
阅读新闻稿01Jun
New 200-V N-Channel MOSFETs for Power over Ethernet Applications Give Extra Voltage Headroom
阅读新闻稿06May
Improved Figure of Merit 30-V N-Channel MOSFETs for Synchronous Rectification
阅读新闻稿02May
Family of Improved Figure of Merit 150-V N-Channel MOSFETs for Power over Ethernet Applications
阅读新闻稿20Mar