Key Product Features
- Low rDS(on) @ VGS = 4.5 V
- High VGS max rating (25 V for P-channel MOSFET)
- Low Qg (N:12 nC, P:13 nC)
- High pulsed current rating (50A)
P and N-Channel Complementary MOSFETs in SO-8
The AM4502C consists of a P and an N-Channel MOSFET in an SO-8 package making it ideal for power conversion applications using a half-bridge or full-bridge configuration.
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Product Summary |
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| Device | VDS (V) | rDS(on) (mW) | ID (A) |
| N-Ch | 30 | 20 @VGS =4.5 V | 8.4 |
| 16 @ VGS = 10 V | 10 | ||
| P-ch | -30 | 30 @ VGS = -4.5 V | -6.8 |
| 19 @ VGS = -10V | -8.5 | ||
| Selected Specifications | ||||||
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Parameter |
Symbol (die) | Conditions | Min | Typ | Max | Unit |
| Static | ||||||
| Gate-Source Threshold Voltage | VGS(th) (N-Ch) | VDS = VGS, ID = 250 uA | 1.0 | 1.9 | V | |
| VGS(th) (P-Ch) | VDS = VGS, ID = -250 uA | -1.0 | -1.6 | V | ||
| Gate-Body Leakage | IGSS (N-Ch) | VDS = 0 V, VGS = +/-20 V | +/-100 | nA | ||
| IGSS (P-Ch) | VDS = 0 V, VGS = +/-20 V | +/-100 | nA | |||
| Zero Gate-Source Voltage Drain Current | IDSS (N-Ch) | VDS = 24V, VGS = 0V | 1 | uA | ||
| IDSS (P-Ch) | VDS = -24V, VGS = 0V | -1 | uA | |||
| Drain-Source On resistance | rDS(on) (N-Ch) | VGS = 10 V, ID = 10 A | 12 | 16 | m Ohm | |
| VGS = 4.5 V, ID = 8.4 A | 15 | 20 | m Ohm | |||
| rDS(on) (P-Ch) | VGS = -10 V, ID = -8.5 A | 16 | 19 | m Ohm | ||
| VGS = -4.5 V, ID = -6.8 A | 26 | 30 | m Ohm | |||
| Dynamic | ||||||
| Total Gate Charge | Qg (N-Ch) | VDS = 15V, VGS = 4.5V, ID = 10A | 12 | nC | ||
| Gate-Sorce Charge | QGS (N-Ch) | 3.3 | nC | |||
| Gate-Drain Charge | QGD (N-Ch) | 4.5 | nC | |||
| Total Gate Charge | Qg (P-Ch) | VDS = -15V, VGS = 4.5V, ID = -10A | 13 | nC | ||
| Gate-Sorce Charge | QGS (P-Ch) | 5.8 | nC | |||
| Gate-Drain Charge | QGD (P-Ch) | 4.5 | nC | |||